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Dawei Li, Zhiyong Xiao, Sai Mu, Fei Wang, Ying Liu, Jingfeng Song, Xi Huang, Lijia Jiang, Jun Xiao, Lei Liu, Stephen Ducharme, Bai Cui, Xia Hong, Lan Jiang, Jean-Francois Silvain, Yongfeng Lu . A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals. Nano Letters 2018 , 18 (3) , 2021-2032. 18 (3) , 2021-2032. https://doi.org/10.1021/acs.nanolett.7b05473

Sung-Wook Min, Minho Yoon, Sung Jin Yang, Kyeong Rok Ko, and Seongil Im . Charge-Transfer-Induced p-Type Channel in MoS2 Flake Field Effect Transistors. ACS Applied Materials & Interfaces 2018 , 10 (4) , 4206-4212. 10 (4) , 4206-4212. https://doi.org/10.1021/acsami.7b15863

Shaswat Barua, Hemant Sankar Dutta, Satyabrat Gogoi, Rashmita Devi, Raju Khan . Nanostructured MoS2-Based Advanced Biosensors: A Review. ACS Applied Nano Materials 2018 , 1 (1) , 2-25. 1 (1) , 2-25. https://doi.org/10.1021/acsanm.7b00157

Xuefei Li, Roberto Grassi, Sichao Li, Tiaoyang Li, Xiong Xiong, Tony Low, and Yanqing Wu . Anomalous Temperature Dependence in Metal–Black Phosphorus Contact. Nano Letters 2018 , 18 (1) , 26-31. 18 (1) , 26-31. https://doi.org/10.1021/acs.nanolett.7b02278

Hyun-Soo Ra, A-Young Lee, Do-Hyun Kwak, Min-Hye Jeong, and Jong-Soo Lee . Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers. ACS Applied Materials & Interfaces 2018 , 10 (1) , 925-932. 10 (1) , 925-932. https://doi.org/10.1021/acsami.7b16809

Daniel S. Schulman, Amritanand Sebastian, Drew Buzzell, Yu-Ting Huang, Andrew J. Arnold, and Saptarshi Das . Facile Electrochemical Synthesis of 2D Monolayers for High-Performance Thin-Film Transistors. ACS Applied Materials & Interfaces 2017 , 9 (51) , 44617-44624. 9 (51) , 44617-44624. https://doi.org/10.1021/acsami.7b14711

Ching-Hwa Ho, Wei-Hao Chen, Kwong K. Tiong, Kuei-Yi Lee, Alexandre Gloter, Alberto Zobelli, Odile Stephan, and Luiz Henrique Galvão Tizei . Interplay Between Cr Dopants and Vacancy Clustering in the Structural and Optical Properties of WSe2. ACS Nano 2017 , 11 (11) , 11162-11168. 11 (11) , 11162-11168. https://doi.org/10.1021/acsnano.7b05426

Lei Peng, Chan Wang, Qi Qian, Cheng Bi, Sufan Wang, and Yucheng Huang . Complete Separation of Carriers in the GeS/SnS Lateral Heterostructure by Uniaxial Tensile Strain. ACS Applied Materials & Interfaces 2017 , 9 (46) , 40969-40977. 9 (46) , 40969-40977. https://doi.org/10.1021/acsami.7b11613

Yuanyuan Li, Qiannan Cui, Frank Ceballos, Samuel D. Lane, Zeming Qi, and Hui Zhao . Ultrafast Interlayer Electron Transfer in Incommensurate Transition Metal Dichalcogenide Homobilayers. Nano Letters 2017 , 17 (11) , 6661-6666. 17 (11) , 6661-6666. https://doi.org/10.1021/acs.nanolett.7b02608

Haoqi Chen, Bin Li, and Jinlong Yang . Proximity Effect Induced Spin Injection in Phosphorene on Magnetic Insulator. ACS Applied Materials & Interfaces 2017 , 9 (44) , 38999-39010. 9 (44) , 38999-39010. https://doi.org/10.1021/acsami.7b11454

Yonghun Kim, Ah Ra Kim, Guoqing Zhao, Sun Young Choi, Soo Cheol Kang, Sung Kwan Lim, Kang Eun Lee, Jucheol Park, Byoung Hun Lee, Myung Gwan Hahm, Dong-Ho Kim, Jungheum Yun, Kyu Hwan Lee, and Byungjin Cho . Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors. ACS Applied Materials & Interfaces 2017 , 9 (42) , 37146-37153. 9 (42) , 37146-37153. https://doi.org/10.1021/acsami.7b10676

Jinshui Miao, Zhihao Xu, Qing Li, Arthur Bowman, Suoming Zhang, Weida Hu, Zhixian Zhou, and Chuan Wang . Vertically Stacked and Self-Encapsulated van der Waals Heterojunction Diodes Using Two-Dimensional Layered Semiconductors. ACS Nano 2017 , 11 (10) , 10472-10479. 11 (10) , 10472-10479. https://doi.org/10.1021/acsnano.7b05755

Yue Li, Kailiang Zhang, Fang Wang, Yulin Feng, Yi Li, Yemei Han, Dengxuan Tang, and Baojun Zhang . Scalable Synthesis of Highly Crystalline MoSe2 and Its Ambipolar Behavior. ACS Applied Materials & Interfaces 2017 , 9 (41) , 36009-36016. 9 (41) , 36009-36016. https://doi.org/10.1021/acsami.7b10693

Chao-Hui Yeh, Zheng-Yong Liang, Yung-Chang Lin, Tien-Lin Wu, Ta Fan, Yu-Cheng Chu, Chun-Hao Ma, Yu-Chen Liu, Ying-Hao Chu, Kazutomo Suenaga, and Po-Wen Chiu . Scalable van der Waals Heterojunctions for High-Performance Photodetectors. ACS Applied Materials & Interfaces 2017 , 9 (41) , 36181-36188. 9 (41) , 36181-36188. https://doi.org/10.1021/acsami.7b10892

Jae-Yeol Hwang, Young-Min Kim, Kyu Hyoung Lee, Hiromichi Ohta, and Sung Wng Kim . Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire. Nano Letters 2017 , 17 (10) , 6140-6145. 17 (10) , 6140-6145. https://doi.org/10.1021/acs.nanolett.7b02737

Xianchong Miao, Ningning Xuan, Qi Liu, Weishu Wu, Hanqi Liu, Zhengzong Sun, and Minbiao Ji . Optimizing Nonlinear Optical Visibility of Two-Dimensional Materials. ACS Applied Materials & Interfaces 2017 , 9 (39) , 34448-34455. 9 (39) , 34448-34455. https://doi.org/10.1021/acsami.7b09807

Neha P. Kondekar, Matthew G. Boebinger, Eric V. Woods, and Matthew T. McDowell . In Situ XPS Investigation of Transformations at Crystallographically Oriented MoS2 Interfaces. ACS Applied Materials & Interfaces 2017 , 9 (37) , 32394-32404. 9 (37) , 32394-32404. https://doi.org/10.1021/acsami.7b10230

Yuan Liu, Jian Guo, Qiyuan He, Hao Wu, Hung-Chieh Cheng, Mengning Ding, Imran Shakir, Vincent Gambin, Yu Huang, and Xiangfeng Duan . Vertical Charge Transport and Negative Transconductance in Multilayer Molybdenum Disulfides. Nano Letters 2017 , 17 (9) , 5495-5501. 17 (9) , 5495-5501. https://doi.org/10.1021/acs.nanolett.7b02161

John F. Curry, Mark A. Wilson, Henry S. Luftman, Nicholas C. Strandwitz, Nicolas Argibay, Michael Chandross, Mark A. Sidebottom, and Brandon A. Krick . Impact of Microstructure on MoS2 Oxidation and Friction. ACS Applied Materials & Interfaces 2017 , 9 (33) , 28019-28026. 9 (33) , 28019-28026. https://doi.org/10.1021/acsami.7b06917

Kunttal Keyshar, Morgann Berg, Xiang Zhang, Robert Vajtai, Gautam Gupta, Calvin K. Chan, Thomas E. Beechem, Pulickel M. Ajayan, Aditya D. Mohite, and Taisuke Ohta . Experimental Determination of the Ionization Energies of MoSe2, WS2, and MoS2 on SiO2 Using Photoemission Electron Microscopy. ACS Nano 2017 , 11 (8) , 8223-8230. 11 (8) , 8223-8230. https://doi.org/10.1021/acsnano.7b03242

Xin-Ran Nie, Bing-Qi Sun, Hao Zhu, Min Zhang, Dong-Hui Zhao, Lin Chen, Qing-Qing Sun, and David Wei Zhang . Impact of Metal Contacts on the Performance of Multilayer HfS2 Field-Effect Transistors. ACS Applied Materials & Interfaces 2017 , 9 (32) , 26996-27003. 9 (32) , 26996-27003. https://doi.org/10.1021/acsami.7b06160

Katherine M. Price, Kirstin E. Schauble, Felicia A. McGuire, Damon B. Farmer, and Aaron D. Franklin . Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition. ACS Applied Materials & Interfaces 2017 , 9 (27) , 23072-23080. 9 (27) , 23072-23080. https://doi.org/10.1021/acsami.7b00538

Pantelis Bampoulis, Rik van Bremen, Qirong Yao, Bene Poelsema, Harold J. W. Zandvliet, and Kai Sotthewes . Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts. ACS Applied Materials & Interfaces 2017 , 9 (22) , 19278-19286. 9 (22) , 19278-19286. https://doi.org/10.1021/acsami.7b02739

Chaoliang Tan, Xiehong Cao, Xue-Jun Wu, Qiyuan He, Jian Yang, Xiao Zhang, Junze Chen, Wei Zhao, Shikui Han, Gwang-Hyeon Nam, Melinda Sindoro, and Hua Zhang . Recent Advances in Ultrathin Two-Dimensional Nanomaterials. Chemical Reviews 2017 , 117 (9) , 6225-6331. 117 (9) , 6225-6331. https://doi.org/10.1021/acs.chemrev.6b00558

Hyun Gu Kim and Han-Bo-Ram Lee . Atomic Layer Deposition on 2D Materials. Chemistry of Materials 2017 , 29 (9) , 3809-3826. 29 (9) , 3809-3826. https://doi.org/10.1021/acs.chemmater.6b05103

Yongsuk Choi, Junmo Kang, Deep Jariwala, Spencer A. Wells, Moon Sung Kang, Tobin J. Marks, Mark C. Hersam, and Jeong Ho Cho . Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling. Chemistry of Materials 2017 , 29 (9) , 4008-4013. 29 (9) , 4008-4013. https://doi.org/10.1021/acs.chemmater.7b00573

Yuewen Sheng, Xiaochen Wang, Kazunori Fujisawa, Siqi Ying, Ana Laura Elias, Zhong Lin, Wenshuo Xu, Yingqiu Zhou, Alexander M. Korsunsky, Harish Bhaskaran, Mauricio Terrones, and Jamie H. Warner . Photoluminescence Segmentation within Individual Hexagonal Monolayer Tungsten Disulfide Domains Grown by Chemical Vapor Deposition. ACS Applied Materials & Interfaces 2017 , 9 (17) , 15005-15014. 9 (17) , 15005-15014. https://doi.org/10.1021/acsami.6b16287

Serkan Butun, Edgar Palacios, Jeffrey D. Cain, Zizhuo Liu, Vinayak P. Dravid, and Koray Aydin . Quantifying Plasmon-Enhanced Light Absorption in Monolayer WS2 Films. ACS Applied Materials & Interfaces 2017 , 9 (17) , 15044-15051. 9 (17) , 15044-15051. https://doi.org/10.1021/acsami.7b01947

Jian-Feng Li, Yue-Jiao Zhang, Song-Yuan Ding, Rajapandiyan Panneerselvam, and Zhong-Qun Tian . Core–Shell Nanoparticle-Enhanced Raman Spectroscopy. Chemical Reviews 2017 , 117 (7) , 5002-5069. 117 (7) , 5002-5069. https://doi.org/10.1021/acs.chemrev.6b00596

Hrishikesh Bhunia, Abhijit Bera, and Amlan J. Pal . Current Rectification through Vertical Heterojunctions between Two Single-Layer Dichalcogenides (WSe2|MoS2pn-Junctions). ACS Applied Materials & Interfaces 2017 , 9 (9) , 8248-8254. 9 (9) , 8248-8254. https://doi.org/10.1021/acsami.6b15740

Abhijith Prakash and Joerg Appenzeller . Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe2 Schottky Barrier Transistors. ACS Nano 2017 , 11 (2) , 1626-1632. 11 (2) , 1626-1632. https://doi.org/10.1021/acsnano.6b07360

Mikai Chen, Yifan Wang, Nathan Shepherd, Chad Huard, Jiantao Zhou, L. J. Guo, Wei Lu, and Xiaogan Liang . Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors. ACS Nano 2017 , 11 (1) , 1091-1102. 11 (1) , 1091-1102. https://doi.org/10.1021/acsnano.6b08156

Wei Chen, Yayuan Liu, Yuzhang Li, Jie Sun, Yongcai Qiu, Chong Liu, Guangmin Zhou, and Yi Cui . In Situ Electrochemically Derived Nanoporous Oxides from Transition Metal Dichalcogenides for Active Oxygen Evolution Catalysts. Nano Letters 2016 , 16 (12) , 7588-7596. 16 (12) , 7588-7596. https://doi.org/10.1021/acs.nanolett.6b03458

Ye Fan, Alex W. Robertson, Xiaowei Zhang, Martin Tweedie, Yingqiu Zhou, Mark H. Rummeli, Haimei Zheng, and Jamie H. Warner . Negative Electro-conductance in Suspended 2D WS2 Nanoscale Devices. ACS Applied Materials & Interfaces 2016 , 8 (48) , 32963-32970. 8 (48) , 32963-32970. https://doi.org/10.1021/acsami.6b11480

Henan Li, Peng Li, Jing-Kai Huang, Ming-Yang Li, Chih-Wen Yang, Yumeng Shi, Xi-Xiang Zhang, and Lain-Jong Li . Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area. ACS Nano 2016 , 10 (11) , 10516-10523. 10 (11) , 10516-10523. https://doi.org/10.1021/acsnano.6b06496

Foad Ghasemi and Shams Mohajerzadeh . Sequential Solvent Exchange Method for Controlled Exfoliation of MoS2 Suitable for Phototransistor Fabrication. ACS Applied Materials & Interfaces 2016 , 8 (45) , 31179-31191. 8 (45) , 31179-31191. https://doi.org/10.1021/acsami.6b07211

Mehwish Naz, Toby Hallam, Nina C. Berner, Niall McEvoy, Riley Gatensby, John B. McManus, Zareen Akhter, and Georg S. Duesberg . A New 2H-2H′/1T Cophase in Polycrystalline MoS2 and MoSe2 Thin Films. ACS Applied Materials & Interfaces 2016 , 8 (45) , 31442-31448. 8 (45) , 31442-31448. https://doi.org/10.1021/acsami.6b10972

Chong-Rong Wu, Xiang-Rui Chang, Tung-Wei Chu, Hsuan-An Chen, Chao-Hsin Wu, and Shih-Yen Lin . Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth. Nano Letters 2016 , 16 (11) , 7093-7097. 16 (11) , 7093-7097. https://doi.org/10.1021/acs.nanolett.6b03353

Jeong-Gyu Song, Seok Jin Kim, Whang Je Woo, Youngjun Kim, Il-Kwon Oh, Gyeong Hee Ryu, Zonghoon Lee, Jun Hyung Lim, Jusang Park, and Hyungjun Kim . Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor. ACS Applied Materials & Interfaces 2016 , 8 (41) , 28130-28135. 8 (41) , 28130-28135. https://doi.org/10.1021/acsami.6b07271

Yuan Liu, Jian Guo, Yecun Wu, Enbo Zhu, Nathan O. Weiss, Qiyuan He, Hao Wu, Hung-Chieh Cheng, Yang Xu, Imran Shakir, Yu Huang, and Xiangfeng Duan . Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors. Nano Letters 2016 , 16 (10) , 6337-6342. 16 (10) , 6337-6342. https://doi.org/10.1021/acs.nanolett.6b02713

Chaitanya U. Kshirsagar, Weichao Xu, Yang Su, Matthew C. Robbins, Chris H. Kim, and Steven J. Koester . Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents. ACS Nano 2016 , 10 (9) , 8457-8464. 10 (9) , 8457-8464. https://doi.org/10.1021/acsnano.6b03440

Nirpendra Singh and Udo Schwingenschlögl . Extended Moment Formation in Monolayer WS2 Doped with 3d Transition-Metals. ACS Applied Materials & Interfaces 2016 , 8 (36) , 23886-23890. 8 (36) , 23886-23890. https://doi.org/10.1021/acsami.6b05670

Xing Juan Chua, Jan Luxa, Alex Yong Sheng Eng, Shu Min Tan, Zdeněk Sofer, and Martin Pumera . Negative Electrocatalytic Effects of p-Doping Niobium and Tantalum on MoS2 and WS2 for the Hydrogen Evolution Reaction and Oxygen Reduction Reaction. ACS Catalysis 2016 , 6 (9) , 5724-5734. 6 (9) , 5724-5734. https://doi.org/10.1021/acscatal.6b01593

Xingqiang Liu, Xiaonian Yang, Guoyun Gao, Zhenyu Yang, Haitao Liu, Qiang Li, Zheng Lou, Guozhen Shen, Lei Liao, Caofeng Pan, and Zhong Lin Wang . Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires. ACS Nano 2016 , 10 (8) , 7451-7457. 10 (8) , 7451-7457. https://doi.org/10.1021/acsnano.6b01839

Cristina E. Giusca, Ivan Rungger, Vishal Panchal, Christos Melios, Zhong Lin, Yu-Chuan Lin, Ethan Kahn, Ana Laura Elías, Joshua A. Robinson, Mauricio Terrones, and Olga Kazakova . Excitonic Effects in Tungsten Disulfide Monolayers on Two-Layer Graphene. ACS Nano 2016 , 10 (8) , 7840-7846. 10 (8) , 7840-7846. https://doi.org/10.1021/acsnano.6b03518

Yu-Han Hung, Ang-Yu Lu, Yung-Huang Chang, Jing-Kai Huang, Jeng-Kuei Chang, Lain-Jong Li, and Ching-Yuan Su . Scalable Patterning of MoS2 Nanoribbons by Micromolding in Capillaries. ACS Applied Materials & Interfaces 2016 , 8 (32) , 20993-21001. 8 (32) , 20993-21001. https://doi.org/10.1021/acsami.6b05827

Jing Zhao, Hua Yu, Wei Chen, Rong Yang, Jianqi Zhu, Mengzhou Liao, Dongxia Shi, and Guangyu Zhang . Patterned Peeling 2D MoS2 off the Substrate. ACS Applied Materials & Interfaces 2016 , 8 (26) , 16546-16550. 8 (26) , 16546-16550. https://doi.org/10.1021/acsami.6b04896

Saiful I. Khondaker and Muhammad R. Islam . Bandgap Engineering of MoS2 Flakes via Oxygen Plasma: A Layer Dependent Study. The Journal of Physical Chemistry C 2016 , 120 (25) , 13801-13806. 120 (25) , 13801-13806. https://doi.org/10.1021/acs.jpcc.6b03247

Youngwoo Son, Ming-Yang Li, Chia-Chin Cheng, Kung-Hwa Wei, Pingwei Liu, Qing Hua Wang, Lain-Jong Li, and Michael S. Strano . Observation of Switchable Photoresponse of a Monolayer WSe2–MoS2 Lateral Heterostructure via Photocurrent Spectral Atomic Force Microscopic Imaging. Nano Letters 2016 , 16 (6) , 3571-3577. 16 (6) , 3571-3577. https://doi.org/10.1021/acs.nanolett.6b00699

Y. Katagiri, T. Nakamura, A. Ishii, C. Ohata, M. Hasegawa, S. Katsumoto, T. Cusati, A. Fortunelli, G. Iannaccone, G. Fiori, S. Roche, and J. Haruyama . Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam. Nano Letters 2016 , 16 (6) , 3788-3794. 16 (6) , 3788-3794. https://doi.org/10.1021/acs.nanolett.6b01186

Hugo Casademont, Laure Fillaud, Xavier Lefèvre, Bruno Jousselme, and Vincent Derycke . Electrografted Fluorinated Organic Ultrathin Film as Efficient Gate Dielectric in MoS2 Transistors. The Journal of Physical Chemistry C 2016 , 120 (17) , 9506-9510. 120 (17) , 9506-9510. https://doi.org/10.1021/acs.jpcc.6b01630

William M. Parkin, Adrian Balan, Liangbo Liang, Paul Masih Das, Michael Lamparski, Carl H. Naylor, Julio A. Rodríguez-Manzo, A. T. Charlie Johnson, Vincent Meunier, and Marija Drndić . Raman Shifts in Electron-Irradiated Monolayer MoS2. ACS Nano 2016 , 10 (4) , 4134-4142. 10 (4) , 4134-4142. https://doi.org/10.1021/acsnano.5b07388

Weinan Zhu, Saungeun Park, Maruthi N. Yogeesh, Kyle M. McNicholas, Seth R. Bank, and Deji Akinwande . Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies. Nano Letters 2016 , 16 (4) , 2301-2306. 16 (4) , 2301-2306. https://doi.org/10.1021/acs.nanolett.5b04768

Dawei Li, Wei Xiong, Lijia Jiang, Zhiyong Xiao, Hossein Rabiee Golgir, Mengmeng Wang, Xi Huang, Yunshen Zhou, Zhe Lin, Jingfeng Song, Stephen Ducharme, Lan Jiang, Jean-Francois Silvain, and Yongfeng Lu . Multimodal Nonlinear Optical Imaging of MoS2 and MoS2-Based van der Waals Heterostructures. ACS Nano 2016 , 10 (3) , 3766-3775. 10 (3) , 3766-3775. https://doi.org/10.1021/acsnano.6b00371

John M. Woods, Yeonwoong Jung, Yujun Xie, Wen Liu, Yanhui Liu, Hailiang Wang, and Judy J. Cha . One-Step Synthesis of MoS2/WS2 Layered Heterostructures and Catalytic Activity of Defective Transition Metal Dichalcogenide Films. ACS Nano 2016 , 10 (2) , 2004-2009. 10 (2) , 2004-2009. https://doi.org/10.1021/acsnano.5b06126

Junhao Lin, Yuyang Zhang, Wu Zhou, and Sokrates T. Pantelides . Structural Flexibility and Alloying in Ultrathin Transition-Metal Chalcogenide Nanowires. ACS Nano 2016 , 10 (2) , 2782-2790. 10 (2) , 2782-2790. https://doi.org/10.1021/acsnano.5b07888

Amirhasan Nourbakhsh, Ahmad Zubair, Mildred S. Dresselhaus, and Tomás Palacios . Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application. Nano Letters 2016 , 16 (2) , 1359-1366. 16 (2) , 1359-1366. https://doi.org/10.1021/acs.nanolett.5b04791

Shengxi Huang, Liangbo Liang, Xi Ling, Alexander A. Puretzky, David B. Geohegan, Bobby G. Sumpter, Jing Kong, Vincent Meunier, and Mildred S. Dresselhaus . Low-Frequency Interlayer Raman Modes to Probe Interface of Twisted Bilayer MoS2. Nano Letters 2016 , 16 (2) , 1435-1444. 16 (2) , 1435-1444. https://doi.org/10.1021/acs.nanolett.5b05015

Dimitra Tsoutsou, Kleopatra E. Aretouli, Polychronis Tsipas, Jose Marquez-Velasco, Evangelia Xenogiannopoulou, Nikolaos Kelaidis, Sigiava Aminalragia Giamini, and Athanasios Dimoulas . Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures. ACS Applied Materials & Interfaces 2016 , 8 (3) , 1836-1841. 8 (3) , 1836-1841. https://doi.org/10.1021/acsami.5b09743

Zhanhai Yang, Hui Liang, Xusheng Wang, Xinlei Ma, Tao Zhang, Yanlian Yang, Liming Xie, Dong Chen, Yujia Long, Jitao Chen, Yunjie Chang, Chunhua Yan, Xinxiang Zhang, Xueji Zhang, Binghui Ge, Zhian Ren, Mianqi Xue, and Genfu Chen . Atom-Thin SnS2–xSex with Adjustable Compositions by Direct Liquid Exfoliation from Single Crystals. ACS Nano 2016 , 10 (1) , 755-762. 10 (1) , 755-762. https://doi.org/10.1021/acsnano.5b05823

Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Pyo Jin Jeon, Iman Shackery, Jin Sung Kim, Il-Kwon Oh, Seong Chan Jun, Hyungjun Kim, and Seongil Im . Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2p-Channel and MoS2n-Channel Transistors. ACS Nano 2016 , 10 (1) , 1118-1125. 10 (1) , 1118-1125. https://doi.org/10.1021/acsnano.5b06419

Naveen Kaushik, Debjani Karmakar, Ankur Nipane, Shruti Karande, and Saurabh Lodha . Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2. ACS Applied Materials & Interfaces 2016 , 8 (1) , 256-263. 8 (1) , 256-263. https://doi.org/10.1021/acsami.5b08559

Xian Zhang, Dezheng Sun, Yilei Li, Gwan-Hyoung Lee, Xu Cui, Daniel Chenet, Yumeng You, Tony F. Heinz, and James C. Hone . Measurement of Lateral and Interfacial Thermal Conductivity of Single- and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique. ACS Applied Materials & Interfaces 2015 , 7 (46) , 25923-25929. 7 (46) , 25923-25929. https://doi.org/10.1021/acsami.5b08580

Shuaixing Jin, Gongzheng Yang, Huawei Song, Hao Cui, and Chengxin Wang . Ultrathin Hexagonal 2D Co2GeO4 Nanosheets: Excellent Li-Storage Performance and ex Situ Investigation of Electrochemical Mechanism. ACS Applied Materials & Interfaces 2015 , 7 (44) , 24932-24943. 7 (44) , 24932-24943. https://doi.org/10.1021/acsami.5b08446

Kun Chen, Xi Wan, Jinxiu Wen, Weiguang Xie, Zhiwen Kang, Xiaoliang Zeng, Huanjun Chen, and Jian-Bin Xu . Electronic Properties of MoS2–WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy. ACS Nano 2015 , 9 (10) , 9868-9876. 9 (10) , 9868-9876. https://doi.org/10.1021/acsnano.5b03188

Junpeng Lu, Jing Wu, Alexandra Carvalho, Angelo Ziletti, Hongwei Liu, Junyou Tan, Yifan Chen, A. H. Castro Neto, Barbaros Özyilmaz, and Chorng Haur Sow . Bandgap Engineering of Phosphorene by Laser Oxidation toward Functional 2D Materials. ACS Nano 2015 , 9 (10) , 10411-10421. 9 (10) , 10411-10421. https://doi.org/10.1021/acsnano.5b04623

Zhi Gen Yu, Yong-Wei Zhang, and Boris I. Yakobson . An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2. Nano Letters 2015 , 15 (10) , 6855-6861. 15 (10) , 6855-6861. https://doi.org/10.1021/acs.nanolett.5b02769

Pyo Jin Jeon, Jin Sung Kim, June Yeong Lim, Youngsuk Cho, Atiye Pezeshki, Hee Sung Lee, Sanghyuck Yu, Sung-Wook Min, and Seongil Im . Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits. ACS Applied Materials & Interfaces 2015 , 7 (40) , 22333-22340. 7 (40) , 22333-22340. https://doi.org/10.1021/acsami.5b06027

Yiping Wang, Yunfeng Shi, Guoqing Xin, Jie Lian, and Jian Shi . Two-Dimensional van der Waals Epitaxy Kinetics in a Three-Dimensional Perovskite Halide. Crystal Growth & Design 2015 , 15 (10) , 4741-4749. 15 (10) , 4741-4749. https://doi.org/10.1021/acs.cgd.5b00949

Mikai Chen, Hongsuk Nam, Hossein Rokni, Sungjin Wi, Jeong Seop Yoon, Pengyu Chen, Katsuo Kurabayashi, Wei Lu, and Xiaogan Liang . Nanoimprint-Assisted Shear Exfoliation (NASE) for Producing Multilayer MoS2 Structures as Field-Effect Transistor Channel Arrays. ACS Nano 2015 , 9 (9) , 8773-8785. 9 (9) , 8773-8785. https://doi.org/10.1021/acsnano.5b01715

Zhaogang Nie, Run Long, Jefri S. Teguh, Chung-Che Huang, Daniel W. Hewak, Edwin K. L. Yeow, Zexiang Shen, Oleg V. Prezhdo, and Zhi-Heng Loh . Ultrafast Electron and Hole Relaxation Pathways in Few-Layer MoS2. The Journal of Physical Chemistry C 2015 , 119 (35) , 20698-20708. 119 (35) , 20698-20708. https://doi.org/10.1021/acs.jpcc.5b05048

Chengjun Jin, Filip A. Rasmussen, and Kristian S. Thygesen . Tuning the Schottky Barrier at the Graphene/MoS2 Interface by Electron Doping: Density Functional Theory and Many-Body Calculations. The Journal of Physical Chemistry C 2015 , 119 (34) , 19928-19933. 119 (34) , 19928-19933. https://doi.org/10.1021/acs.jpcc.5b05580

Liang Chen, Bilu Liu, Mingyuan Ge, Yuqiang Ma, Ahmad N. Abbas, and Chongwu Zhou . Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode. ACS Nano 2015 , 9 (8) , 8368-8375. 9 (8) , 8368-8375. https://doi.org/10.1021/acsnano.5b03043

Kyungjune Cho, Misook Min, Tae-Young Kim, Hyunhak Jeong, Jinsu Pak, Jae-Keun Kim, Jingon Jang, Seok Joon Yun, Young Hee Lee, Woong-Ki Hong, and Takhee Lee . Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules. ACS Nano 2015 , 9 (8) , 8044-8053. 9 (8) , 8044-8053. https://doi.org/10.1021/acsnano.5b04400

Lili Yu, Ahmad Zubair, Elton J. G. Santos, Xu Zhang, Yuxuan Lin, Yuhao Zhang, and Tomás Palacios . High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits. Nano Letters 2015 , 15 (8) , 4928-4934. 15 (8) , 4928-4934. https://doi.org/10.1021/acs.nanolett.5b00668

Atresh Sanne, Rudresh Ghosh, Amritesh Rai, Maruthi Nagavalli Yogeesh, Seung Heon Shin, Ankit Sharma, Karalee Jarvis, Leo Mathew, Rajesh Rao, Deji Akinwande, and Sanjay Banerjee . Radio Frequency Transistors and Circuits Based on CVD MoS2. Nano Letters 2015 , 15 (8) , 5039-5045. 15 (8) , 5039-5045. https://doi.org/10.1021/acs.nanolett.5b01080

G. He, K. Ghosh, U. Singisetti, H. Ramamoorthy, R. Somphonsane, G. Bohra, M. Matsunaga, A. Higuchi, N. Aoki, S. Najmaei, Y. Gong, X. Zhang, R. Vajtai, P. M. Ajayan, and J. P. Bird . Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation. Nano Letters 2015 , 15 (8) , 5052-5058. 15 (8) , 5052-5058. https://doi.org/10.1021/acs.nanolett.5b01159

Byungjin Cho, Jongwon Yoon, Sung Kwan Lim, Ah Ra Kim, Dong-Ho Kim, Sung-Gyu Park, Jung-Dae Kwon, Young-Joo Lee, Kyu-Hwan Lee, Byoung Hun Lee, Heung Cho Ko, and Myung Gwan Hahm . Chemical Sensing of 2D Graphene/MoS2 Heterostructure device. ACS Applied Materials & Interfaces 2015 , 7 (30) , 16775-16780. 7 (30) , 16775-16780. https://doi.org/10.1021/acsami.5b04541

Gwan-Hyoung Lee, Xu Cui, Young Duck Kim, Ghidewon Arefe, Xian Zhang, Chul-Ho Lee, Fan Ye, Kenji Watanabe, Takashi Taniguchi, Philip Kim, and James Hone . Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. ACS Nano 2015 , 9 (7) , 7019-7026. 9 (7) , 7019-7026. https://doi.org/10.1021/acsnano.5b01341

Yuqiang Ma, Bilu Liu, Anyi Zhang, Liang Chen, Mohammad Fathi, Chenfei Shen, Ahmad N. Abbas, Mingyuan Ge, Matthew Mecklenburg, and Chongwu Zhou . Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices. ACS Nano 2015 , 9 (7) , 7383-7391. 9 (7) , 7383-7391. https://doi.org/10.1021/acsnano.5b02399

Amritesh Rai, Amithraj Valsaraj, Hema C.P. Movva, Anupam Roy, Rudresh Ghosh, Sushant Sonde, Sangwoo Kang, Jiwon Chang, Tanuj Trivedi, Rik Dey, Samaresh Guchhait, Stefano Larentis, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee . Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Letters 2015 , 15 (7) , 4329-4336. 15 (7) , 4329-4336. https://doi.org/10.1021/acs.nanolett.5b00314

Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Yen-Fu Lin, Song-Lin Li, and Kazuhito Tsukagoshi . Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors. ACS Nano 2015 , 9 (6) , 5976-5983. 9 (6) , 5976-5983. https://doi.org/10.1021/acsnano.5b00736

Bilu Liu, Mohammad Fathi, Liang Chen, Ahmad Abbas, Yuqiang Ma, and Chongwu Zhou . Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study. ACS Nano 2015 , 9 (6) , 6119-6127. 9 (6) , 6119-6127. https://doi.org/10.1021/acsnano.5b01301

Hongjun Liu, Hao Zheng, Fang Yang, Lu Jiao, Jinglei Chen, Wingkin Ho, Chunlei Gao, Jinfeng Jia, and Maohai Xie . Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy. ACS Nano 2015 , 9 (6) , 6619-6625. 9 (6) , 6619-6625. https://doi.org/10.1021/acsnano.5b02789

Tianran Lin, Jing Wang, Liangqia Guo, and Fengfu Fu . [email protected] Core–Shell Composites: Preparation, Characterization, and Catalytic Application. The Journal of Physical Chemistry C 2015 , 119 (24) , 13658-13664. 119 (24) , 13658-13664. https://doi.org/10.1021/acs.jpcc.5b02516

Yeliang Wang, Linfei Li, Wei Yao, Shiru Song, J. T. Sun, Jinbo Pan, Xiao Ren, Chen Li, Eiji Okunishi, Yu-Qi Wang, Eryin Wang, Yan Shao, Y. Y. Zhang, Hai-tao Yang, Eike F. Schwier, Hideaki Iwasawa, Kenya Shimada, Masaki Taniguchi, Zhaohua Cheng, Shuyun Zhou, Shixuan Du, Stephen J. Pennycook, Sokrates T. Pantelides, and Hong-Jun Gao . Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt. Nano Letters 2015 , 15 (6) , 4013-4018. 15 (6) , 4013-4018. https://doi.org/10.1021/acs.nanolett.5b00964

Qing Tang and De-en Jiang . Stabilization and Band-Gap Tuning of the 1T-MoS2 Monolayer by Covalent Functionalization. Chemistry of Materials 2015 , 27 (10) , 3743-3748. 27 (10) , 3743-3748. https://doi.org/10.1021/acs.chemmater.5b00986

Huilong Xu, Sara Fathipour, Erich W. Kinder, Alan C. Seabaugh, and Susan K. Fullerton-Shirey . Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte. ACS Nano 2015 , 9 (5) , 4900-4910. 9 (5) , 4900-4910. https://doi.org/10.1021/nn506521p

F. Iyikanat, H. Sahin, R. T. Senger, and F. M. Peeters . Vacancy Formation and Oxidation Characteristics of Single Layer TiS3. The Journal of Physical Chemistry C 2015 , 119 (19) , 10709-10715. 119 (19) , 10709-10715. https://doi.org/10.1021/acs.jpcc.5b01562

Qiannan Cui and Hui Zhao . Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2. ACS Nano 2015 , 9 (4) , 3935-3941. 9 (4) , 3935-3941. https://doi.org/10.1021/acsnano.5b01111

Aaron J. Bradley, Miguel M. Ugeda, Felipe H. da Jornada, Diana Y. Qiu, Wei Ruan, Yi Zhang, Sebastian Wickenburg, Alexander Riss, Jiong Lu, Sung-Kwan Mo, Zahid Hussain, Zhi-Xun Shen, Steven G. Louie, and Michael F. Crommie . Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures. Nano Letters 2015 , 15 (4) , 2594-2599. 15 (4) , 2594-2599. https://doi.org/10.1021/acs.nanolett.5b00160

Youngwoo Son, Qing Hua Wang, Joel A. Paulson, Chih-Jen Shih, Ananth G. Rajan, Kevin Tvrdy, Sojin Kim, Bassam Alfeeli, Richard D. Braatz, and Michael S. Strano . Layer Number Dependence of MoS2 Photoconductivity Using Photocurrent Spectral Atomic Force Microscopic Imaging. ACS Nano 2015 , 9 (3) , 2843-2855. 9 (3) , 2843-2855. https://doi.org/10.1021/nn506924j

Andrzej Taube, Jarosław Judek, Anna Łapińska, and Mariusz Zdrojek . Temperature-Dependent Thermal Properties of Supported MoS2 Monolayers. ACS Applied Materials & Interfaces 2015 , 7 (9) , 5061-5065. 7 (9) , 5061-5065. https://doi.org/10.1021/acsami.5b00690

Joel I-Jan Wang, Yafang Yang, Yu-An Chen, Kenji Watanabe, Takashi Taniguchi, Hugh O. H. Churchill, and Pablo Jarillo-Herrero . Electronic Transport of Encapsulated Graphene and WSe2 Devices Fabricated by Pick-up of Prepatterned hBN. Nano Letters 2015 , 15 (3) , 1898-1903. 15 (3) , 1898-1903. https://doi.org/10.1021/nl504750f

Bo Li, Le Huang, Mianzeng Zhong, Nengjie Huo, Yongtao Li, Shengxue Yang, Chao Fan, Juehan Yang, Wenping Hu, Zhongming Wei, and Jingbo Li . Synthesis and Transport Properties of Large-Scale Alloy Co0.16Mo0.84S2 Bilayer Nanosheets. ACS Nano 2015 , 9 (2) , 1257-1262. 9 (2) , 1257-1262. https://doi.org/10.1021/nn505048y

Lucia Muscuso, Sara Cravanzola, Federico Cesano, Domenica Scarano, and Adriano Zecchina . Optical, Vibrational, and Structural Properties of MoS2 Nanoparticles Obtained by Exfoliation and Fragmentation via Ultrasound Cavitation in Isopropyl Alcohol. The Journal of Physical Chemistry C 2015 , 119 (7) , 3791-3801. 119 (7) , 3791-3801. https://doi.org/10.1021/jp511973k

Matti B. Alemayehu, Matthias Falmbigl, Kim Ta, Corinna Grosse, Richard D. Westover, Sage R. Bauers, Saskia F. Fischer, and David C. Johnson . Structural and Electrical Properties of ([SnSe]1+δ)m(NbSe2)1 Compounds: Single NbSe2 Layers Separated by Increasing Thickness of SnSe. Chemistry of Materials 2015 , 27 (3) , 867-875. 27 (3) , 867-875. https://doi.org/10.1021/cm5039864

Haining Wang, Changjian Zhang, and Farhan Rana . Ultrafast Dynamics of Defect-Assisted Electron–Hole Recombination in Monolayer MoS2. Nano Letters 2015 , 15 (1) , 339-345. 15 (1) , 339-345. https://doi.org/10.1021/nl503636c

Xin-Quan Zhang, Chin-Hao Lin, Yu-Wen Tseng, Kuan-Hua Huang, and Yi-Hsien Lee . Synthesis of Lateral Heterostructures of Semiconducting Atomic Layers. Nano Letters 2015 , 15 (1) , 410-415. 15 (1) , 410-415. https://doi.org/10.1021/nl503744f

Nitin Choudhary, Juhong Park, Jun Yeon Hwang, and Wonbong Choi . Growth of Large-Scale and Thickness-Modulated MoS2 Nanosheets. ACS Applied Materials & Interfaces 2014 , 6 (23) , 21215-21222. 6 (23) , 21215-21222. https://doi.org/10.1021/am506198b

M. F. Khan, M. W. Iqbal, M. Z. Iqbal, M. A. Shehzad, Y. Seo, and Jonghwa Eom . Photocurrent Response of MoS2 Field-Effect Transistor by Deep Ultraviolet Light in Atmospheric and N2 Gas Environments. ACS Applied Materials & Interfaces 2014 , 6 (23) , 21645-21651. 6 (23) , 21645-21651. https://doi.org/10.1021/am506716a

Joonki Suh, Tae-Eon Park, Der-Yuh Lin, Deyi Fu, Joonsuk Park, Hee Joon Jung, Yabin Chen, Changhyun Ko, Chaun Jang, Yinghui Sun, Robert Sinclair, Joonyeon Chang, Sefaattin Tongay, and Junqiao Wu . Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution. Nano Letters 2014 , 14 (12) , 6976-6982. 14 (12) , 6976-6982. https://doi.org/10.1021/nl503251h

Callum J. Docherty, Patrick Parkinson, Hannah J. Joyce, Ming-Hui Chiu, Chang-Hsiao Chen, Ming-Yang Lee, Lain-Jong Li, Laura M. Herz, and Michael B. Johnston . Ultrafast Transient Terahertz Conductivity of Monolayer MoS2 and WSe2 Grown by Chemical Vapor Deposition. ACS Nano 2014 , 8 (11) , 11147-11153. 8 (11) , 11147-11153. https://doi.org/10.1021/nn5034746

Liang Chen, Bilu Liu, Ahmad N. Abbas, Yuqiang Ma, Xin Fang, Yihang Liu, and Chongwu Zhou . Screw-Dislocation-Driven Growth of Two-Dimensional Few-Layer and Pyramid-like WSe2 by Sulfur-Assisted Chemical Vapor Deposition. ACS Nano 2014 , 8 (11) , 11543-11551. 8 (11) , 11543-11551. https://doi.org/10.1021/nn504775f

Yingchun Cheng, Anmin Nie, Qingyun Zhang, Li-Yong Gan, Reza Shahbazian-Yassar, and Udo Schwingenschlogl . Origin of the Phase Transition in Lithiated Molybdenum Disulfide. ACS Nano 2014 , 8 (11) , 11447-11453. 8 (11) , 11447-11453. https://doi.org/10.1021/nn505668c

Saptarshi Das, Marcel Demarteau, and Andreas Roelofs . Ambipolar Phosphorene Field Effect Transistor. ACS Nano 2014 , 8 (11) , 11730-11738. 8 (11) , 11730-11738. https://doi.org/10.1021/nn505868h

Lingming Yang, Kausik Majumdar, Han Liu, Yuchen Du, Heng Wu, Michael Hatzistergos, P. Y. Hung, Robert Tieckelmann, Wilman Tsai, Chris Hobbs, and Peide D. Ye . Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2. Nano Letters 2014 , 14 (11) , 6275-6280. 14 (11) , 6275-6280. https://doi.org/10.1021/nl502603d

Yuchen Du, Han Liu, Yexin Deng, and Peide D. Ye . Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling. ACS Nano 2014 , 8 (10) , 10035-10042. 8 (10) , 10035-10042. https://doi.org/10.1021/nn502553m

Yuxuan Lin, Xi Ling, Lili Yu, Shengxi Huang, Allen L. Hsu, Yi-Hsien Lee, Jing Kong, Mildred S. Dresselhaus, and Tomás Palacios . Dielectric Screening of Excitons and Trions in Single-Layer MoS2. Nano Letters 2014 , 14 (10) , 5569-5576. 14 (10) , 5569-5576. https://doi.org/10.1021/nl501988y

Saptarshi Das, Wei Zhang, Marcel Demarteau, Axel Hoffmann, Madan Dubey, and Andreas Roelofs . Tunable Transport Gap in Phosphorene. Nano Letters 2014 , 14 (10) , 5733-5739. 14 (10) , 5733-5739. https://doi.org/10.1021/nl5025535

Daria Krasnozhon, Dominik Lembke, Clemens Nyffeler, Yusuf Leblebici, and Andras Kis . MoS2 Transistors Operating at Gigahertz Frequencies. Nano Letters 2014 , 14 (10) , 5905-5911. 14 (10) , 5905-5911. https://doi.org/10.1021/nl5028638

Ming-Hui Chiu, Ming-Yang Li, Wengjing Zhang, Wei-Ting Hsu, Wen-Hao Chang, Mauricio Terrones, Humberto Terrones, and Lain-Jong Li . Spectroscopic Signatures for Interlayer Coupling in MoS2–WSe2 van der Waals Stacking. ACS Nano 2014 , 8 (9) , 9649-9656. 8 (9) , 9649-9656. https://doi.org/10.1021/nn504229z

Nihar R. Pradhan, Daniel Rhodes, Yan Xin, Shahriar Memaran, Lakshmi Bhaskaran, Muhandis Siddiq, Stephen Hill, Pulickel M. Ajayan, and Luis Balicas . Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities. ACS Nano 2014 , 8 (8) , 7923-7929. 8 (8) , 7923-7929. https://doi.org/10.1021/nn501693d

Dmitry Ovchinnikov, Adrien Allain, Ying-Sheng Huang, Dumitru Dumcenco, and Andras Kis . Electrical Transport Properties of Single-Layer WS2. ACS Nano 2014 , 8 (8) , 8174-8181. 8 (8) , 8174-8181. https://doi.org/10.1021/nn502362b

Chih-Pin Lu, Guohong Li, Jinhai Mao, Li-Min Wang, and Eva Y. Andrei . Bandgap, Mid-Gap States, and Gating Effects in MoS2. Nano Letters 2014 , 14 (8) , 4628-4633. 14 (8) , 4628-4633. https://doi.org/10.1021/nl501659n

Marco M. Furchi, Andreas Pospischil, Florian Libisch, Joachim Burgdörfer, and Thomas Mueller . Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction. Nano Letters 2014 , 14 (8) , 4785-4791. 14 (8) , 4785-4791. https://doi.org/10.1021/nl501962c

Arend M. van der Zande, Jens Kunstmann, Alexey Chernikov, Daniel A. Chenet, YuMeng You, XiaoXiao Zhang, Pinshane Y. Huang, Timothy C. Berkelbach, Lei Wang, Fan Zhang, Mark S. Hybertsen, David A. Muller, David R. Reichman, Tony F. Heinz, and James C. Hone . Tailoring the Electronic Structure in Bilayer Molybdenum Disulfide via Interlayer Twist. Nano Letters 2014 , 14 (7) , 3869-3875. 14 (7) , 3869-3875. https://doi.org/10.1021/nl501077m

Andrzej Taube, Jarosław Judek, Cezariusz Jastrzębski, Anna Duzynska, Krzysztof Świtkowski, and Mariusz Zdrojek . Temperature-Dependent Nonlinear Phonon Shifts in a Supported MoS2 Monolayer. ACS Applied Materials & Interfaces 2014 , 6 (12) , 8959-8963. 6 (12) , 8959-8963. https://doi.org/10.1021/am502359k

Xuejun Xie, Deblina Sarkar, Wei Liu, Jiahao Kang, Ognian Marinov, M. Jamal Deen, and Kaustav Banerjee . Low-Frequency Noise in Bilayer MoS2 Transistor. ACS Nano 2014 , 8 (6) , 5633-5640. 8 (6) , 5633-5640. https://doi.org/10.1021/nn4066473

Chih-Jen Shih, Qing Hua Wang, Youngwoo Son, Zhong Jin, Daniel Blankschtein, and Michael S. Strano . Tuning On–Off Current Ratio and Field-Effect Mobility in a MoS2–Graphene Heterostructure via Schottky Barrier Modulation. ACS Nano 2014 , 8 (6) , 5790-5798. 8 (6) , 5790-5798. https://doi.org/10.1021/nn500676t

Tania Roy, Mahmut Tosun, Jeong Seuk Kang, Angada B. Sachid, Sujay B. Desai, Mark Hettick, Chenming C. Hu, and Ali Javey . Field-Effect Transistors Built from All Two-Dimensional Material Components. ACS Nano 2014 , 8 (6) , 6259-6264. 8 (6) , 6259-6264. https://doi.org/10.1021/nn501723y

Lili Yu, Yi-Hsien Lee, Xi Ling, Elton J. G. Santos, Yong Cheol Shin, Yuxuan Lin, Madan Dubey, Efthimios Kaxiras, Jing Kong, Han Wang, and Tomás Palacios . Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics. Nano Letters 2014 , 14 (6) , 3055-3063. 14 (6) , 3055-3063. https://doi.org/10.1021/nl404795z

H. Peelaers and C. G. Van de Walle . Elastic Constants and Pressure-Induced Effects in MoS2. The Journal of Physical Chemistry C 2014 , 118 (22) , 12073-12076. 118 (22) , 12073-12076. https://doi.org/10.1021/jp503683h

Rudren Ganatra and Qing Zhang . Few-Layer MoS2: A Promising Layered Semiconductor. ACS Nano 2014 , 8 (5) , 4074-4099. 8 (5) , 4074-4099. https://doi.org/10.1021/nn405938z

Mahmut Tosun, Steven Chuang, Hui Fang, Angada B. Sachid, Mark Hettick, Yongjing Lin, Yuping Zeng, and Ali Javey . High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors. ACS Nano 2014 , 8 (5) , 4948-4953. 8 (5) , 4948-4953. https://doi.org/10.1021/nn5009929

Woanseo Park, Jaeyoon Baik, Tae-Young Kim, Kyungjune Cho, Woong-Ki Hong, Hyun-Joon Shin, and Takhee Lee . Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2 Synthesized by Chemical Vapor Deposition. ACS Nano 2014 , 8 (5) , 4961-4968. 8 (5) , 4961-4968. https://doi.org/10.1021/nn501019g

Seyed Hossein Hosseini Shokouh, Atiye Pezeshki, Syed Raza Ali Raza, Kyunghee Choi, Sung-Wook Min, Pyo Jin Jeon, Hee Sung Lee, and Seongil Im . Molybdenum Disulfide Nanoflake–Zinc Oxide Nanowire Hybrid Photoinverter. ACS Nano 2014 , 8 (5) , 5174-5181. 8 (5) , 5174-5181. https://doi.org/10.1021/nn501230v

Linh-Nam Nguyen, Yann-Wen Lan, Jyun-Hong Chen, Tay-Rong Chang, Yuan-Liang Zhong, Horng-Tay Jeng, Lain-Jong Li, and Chii-Dong Chen . Resonant Tunneling through Discrete Quantum States in Stacked Atomic-Layered MoS2. Nano Letters 2014 , 14 (5) , 2381-2386. 14 (5) , 2381-2386. https://doi.org/10.1021/nl404790n

Saptarshi Das, Richard Gulotty, Anirudha V. Sumant, and Andreas Roelofs . All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor. Nano Letters 2014 , 14 (5) , 2861-2866. 14 (5) , 2861-2866. https://doi.org/10.1021/nl5009037

Ryan Atkins, Michelle Dolgos, Andreas Fiedler, Corinna Grosse, Saskia F. Fischer, Sven P. Rudin, and David C. Johnson . Synthesis and Systematic Trends in Structure and Electrical Properties of [(SnSe)1.15]m(VSe2)1, m = 1, 2, 3, and 4. Chemistry of Materials 2014 , 26 (9) , 2862-2872. 26 (9) , 2862-2872. https://doi.org/10.1021/cm5004774

Shengxue Yang, Jun Kang, Qu Yue, and Kun Yao . Vapor Phase Growth and Imaging Stacking Order of Bilayer Molybdenum Disulfide. The Journal of Physical Chemistry C 2014 , 118 (17) , 9203-9208. 118 (17) , 9203-9208. https://doi.org/10.1021/jp500050r

Yongqing Cai, Gang Zhang, and Yong-Wei Zhang . Polarity-Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons. Journal of the American Chemical Society 2014 , 136 (17) , 6269-6275. 136 (17) , 6269-6275. https://doi.org/10.1021/ja4109787

Deblina Sarkar, Wei Liu, Xuejun Xie, Aaron C. Anselmo, Samir Mitragotri, and Kaustav Banerjee . MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors. ACS Nano 2014 , 8 (4) , 3992-4003. 8 (4) , 3992-4003. https://doi.org/10.1021/nn5009148

Mikai Chen, Hongsuk Nam, Sungjin Wi, Greg Priessnitz, Ivan Manuel Gunawan, and Xiaogan Liang . Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors. ACS Nano 2014 , 8 (4) , 4023-4032. 8 (4) , 4023-4032. https://doi.org/10.1021/nn501181t

Han Liu, Adam T. Neal, Zhen Zhu, Zhe Luo, Xianfan Xu, David Tománek, and Peide D. Ye . Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility. ACS Nano 2014 , 8 (4) , 4033-4041. 8 (4) , 4033-4041. https://doi.org/10.1021/nn501226z

Stephen McDonnell, Rafik Addou, Creighton Buie, Robert M. Wallace, and Christopher L. Hinkle . Defect-Dominated Doping and Contact Resistance in MoS2. ACS Nano 2014 , 8 (3) , 2880-2888. 8 (3) , 2880-2888. https://doi.org/10.1021/nn500044q

Duy Le, Takat B. Rawal, and Talat S. Rahman . Single-Layer MoS2 with Sulfur Vacancies: Structure and Catalytic Application. The Journal of Physical Chemistry C 2014 , 118 (10) , 5346-5351. 118 (10) , 5346-5351. https://doi.org/10.1021/jp411256g

Saptarshi Das, Abhijith Prakash, Ramon Salazar, and Joerg Appenzeller . Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides. ACS Nano 2014 , 8 (2) , 1681-1689. 8 (2) , 1681-1689. https://doi.org/10.1021/nn406603h

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