Zinc Oxide Breakthrough Creates High Performing LEDs

December 9th, 2008 by Jerry James Stone

[social_buttons]German scientists have discovered a method of hydrogen doping that allows the production of higher-performing LEDs and other semiconductors.

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The scientists provided evidence that hydrogen disturbs the process of doping with zinc oxide (ZnO). But a controlled concentration of hydrogen atoms might be the key to making use of ZnO in semiconductor production.

Doping is necessary to activate semiconductors. It involves inserting foreign atoms into the crystal lattice of a solid. These foreign atoms either release an electron (n-doping), or absorb an electron, thus creating a “hole” in the solid (p-doping).

Scientists have really struggled with p-doping and hydrogen. hydrogen atoms always result in n-doping. And according to ScienceDaily, this disturbs the process greatly. Stupid hydrogen!

P-doping is necessary to create LEDs and transistors.

By the way, zinc oxide is everywhere – thousands of tons are produced all over the world every year! It is used in everything from food to sunscreen. Okay, that’s kinda gross.

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Source: ScienceDaily | Photo: © Evgeniy Mitroshkin | Dreamstime.com









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