Quantum phase of matter is of great scientific and technological interest. The quantum spin Hall (QSH) insulator is a newly discovered two-dimensional material that exhibits topological edge state residing inside bulk energy gap, so that its edge is metallic with quantized conductance and its bulk is insulating. For its potential applications in spintronics and quantum computing, a large energy gap is desirable, e.g., for room-temperature application. So far, large-gap QSH insulators have been predicted only in freestanding films. Here we demonstrate the formation of a large-gap QSH state on a semiconductor substrate through epitaxial growth of heavy metal atoms on halogenated Si surface. Our findings not only reveal a new formation mechanism of large-gap QSH insulator, but may also pave the way for its experimental realization.

Abstract