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[Crossref]

Abbas, A. N.

B. Liu, M. Kopf, A. N. Abbas, X. Wang, Q. Guo, Y. Jia, F. Xia, R. Weihrich, F. Bachhuber, F. Pielnhofer, H. Wang, R. Dhall, S. B. Cronin, M. Ge, X. Fang, T. Nilges, and C. Zhou, “Black Arsenic-Phosphorus: layered anisotropic infrared semiconductors with highly tunable compositions and properties,” Adv. Mater. 27(30), 4423–4429 (2015).

[Crossref]

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Allen, S. C.

Analytis, J.

Y. Chen, C. Chen, R. Kealhofer, H. Liu, Z. Yuan, L. Jiang, J. Suh, J. Park, C. Ko, H. S. Choe, J. Avila, M. Zhong, Z. Wei, J. Li, S. Li, H. Gao, Y. Liu, J. Analytis, Q. Xia, M. C. Asensio, and J. Wu, “Black Arsenic: a layered semiconductor with extreme in-plane anisotropy,” Adv. Mater. (Weinheim, Ger.) 30(30), 1800754 (2018).

[Crossref]

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Ang, K.-W.

W. C. Tan, L. H. Huang, E. J. Ng, L. Wang, D. Md. Naruddin Hasan, T. J. Duffin, K. S Kumar, C. A. Nijhuism, C. Lee, and K.-W. Ang, “A black phosphorus carbide infrared phototransistor,” Adv. Mater. (Weinheim, Ger.) 30(6), 1705039 (2018).

[Crossref] W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y.-W. Zhang, C. A. Nijhuis, X. Liu, and K.-W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. (Weinheim, Ger.) 29(24), 1700503 (2017).

[Crossref]

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S. Chakrabarti, A. D. Stiff-Roberts, X. H. Su, P. Bhattacharya, G. Ariyawansa, and A. G. U. Perera, “High-performance mid-infrared quantum dot infrared photodetectors,” J. Phys. D: Appl. Phys. 38(13), 2135–2141 (2005).

[Crossref]

Asahina, H.

H. Asahina and A. Morita, “Band structure and optical properties of black phosphorus,” J. Phys. C: Solid State Phys. 17(11), 1839–1852 (1984).

[Crossref]

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Y. Chen, C. Chen, R. Kealhofer, H. Liu, Z. Yuan, L. Jiang, J. Suh, J. Park, C. Ko, H. S. Choe, J. Avila, M. Zhong, Z. Wei, J. Li, S. Li, H. Gao, Y. Liu, J. Analytis, Q. Xia, M. C. Asensio, and J. Wu, “Black Arsenic: a layered semiconductor with extreme in-plane anisotropy,” Adv. Mater. (Weinheim, Ger.) 30(30), 1800754 (2018).

[Crossref]

Avila, J.

Y. Chen, C. Chen, R. Kealhofer, H. Liu, Z. Yuan, L. Jiang, J. Suh, J. Park, C. Ko, H. S. Choe, J. Avila, M. Zhong, Z. Wei, J. Li, S. Li, H. Gao, Y. Liu, J. Analytis, Q. Xia, M. C. Asensio, and J. Wu, “Black Arsenic: a layered semiconductor with extreme in-plane anisotropy,” Adv. Mater. (Weinheim, Ger.) 30(30), 1800754 (2018).

[Crossref]

Avouris, P.

T. Mueller, F. N. A. Xia, and P. Avouris, “Graphene photodetectors for high speed optical communications,” Nat. Photonics 4(5), 297–301 (2010).

[Crossref]

Bachhuber, F.

B. Liu, M. Kopf, A. N. Abbas, X. Wang, Q. Guo, Y. Jia, F. Xia, R. Weihrich, F. Bachhuber, F. Pielnhofer, H. Wang, R. Dhall, S. B. Cronin, M. Ge, X. Fang, T. Nilges, and C. Zhou, “Black Arsenic-Phosphorus: layered anisotropic infrared semiconductors with highly tunable compositions and properties,” Adv. Mater. 27(30), 4423–4429 (2015).

[Crossref]

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S. D. Gunapala, S. V. Bandara, J. K. Liu, J. M. Mumolo, S. B. Rafol, D. Z. Ting, A. Soibel, and C. Hill, “Quantum well infrared photodetector technology and applications,” IEEE J. Sel. Top. Quantum Electron. 20(6), 154–165 (2014).

[Crossref]

Barve, A. V.

A. V. Barve, J. Montaya, Y. Sharma, T. Rotter, J. Shao, W.-Y. Jang, S. Meesala, S. J. Lee, and S. Krishna, “High temperature operation of quantum dots-in-a-well infrared photodetectors,” Infrared Phys. Technol. 54(3), 215–219 (2011).

[Crossref]

Baryshnikov, N. V.

V. Ryzhii, N. Ryabova, M. Ryzhii, N. V. Baryshnikov, V. E. Karasik, V. Mitin, and T. Otsuji, “Terahertz and infrared photodetectors based on multiple graphene layer and nanoribbon structures,” Opto-Electron. Rev. 20(1), 15–25 (2012).

[Crossref]

Beck, M.

D. Palaferri, Y. Todorov, A. Bigioli, A. Mottaghizadeh, D. Gacemi, A. Calabrese, A. Vasanelli, L. Li, A. G. Davies, E. H. Linfield, F. Kapsalidis, M. Beck, J. Faist, and C. Sirtori, “Room-temperature nine-μm-wavelength photodetectors and GHz-frequency heterodyne receivers,” Nature 556(7699), 85–88 (2018).

[Crossref]

Bhattacharya, P.

S. Chakrabarti, A. D. Stiff-Roberts, X. H. Su, P. Bhattacharya, G. Ariyawansa, and A. G. U. Perera, “High-performance mid-infrared quantum dot infrared photodetectors,” J. Phys. D: Appl. Phys. 38(13), 2135–2141 (2005).

[Crossref]

Bigioli, A.

D. Palaferri, Y. Todorov, A. Bigioli, A. Mottaghizadeh, D. Gacemi, A. Calabrese, A. Vasanelli, L. Li, A. G. Davies, E. H. Linfield, F. Kapsalidis, M. Beck, J. Faist, and C. Sirtori, “Room-temperature nine-μm-wavelength photodetectors and GHz-frequency heterodyne receivers,” Nature 556(7699), 85–88 (2018).

[Crossref]

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L. Thibaudeau, P. Bois, and J. Y. Dubos, “A self - consistent model for quantum well infrared photodetectors,” J. Appl. Phys. (Melville, NY, U. S.) 79(1), 446–454 (1996).

[Crossref] E. Rosencher, B. Vinter, F. Luc, L. Thibaudeu, P. Bois, and J. Nagle, “Emission and capture of electrons in multiquantum-well structures,” IEEE J. Quantum Electron. 30(12), 2875–2888 (1994).

[Crossref]

Bonaccorso, F.

F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, “Graphene photonics and optoelectronics,” Nat. Photonics 4(9), 611–622 (2010).

[Crossref]

Brown, E. R.

H. C. Liu, G. E. Jenkins, E. R. Brown, K. A. McIntosh, K. B. Nichols, and M. J. Manfra, “Optical heterodyne detection and microwave rectification up to 26 GHz using quantum well infrared photodetectors,” IEEE Electron Device Lett. 16(6), 253–255 (1995).

[Crossref] H. C. Liu, J. Li, E. R. Brown, K. A. McIntosh, K. B. Nichols, and M. J. Manfra, “Quantum well intersubband heterodyne infrared detection up to 82 GHz,” Appl. Phys. Lett. 67(11), 1594–1596 (1995).

[Crossref]

Cai, Y.

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y.-W. Zhang, C. A. Nijhuis, X. Liu, and K.-W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. (Weinheim, Ger.) 29(24), 1700503 (2017).

[Crossref] Y. Cai, G. Zhang, and Y.-W. Zhang, “Layer-dependent band alignment and work function of few-layer phosphorene,” Sci. Rep. 4(1), 6677 (2015).

[Crossref]

Calabrese, A.

D. Palaferri, Y. Todorov, A. Bigioli, A. Mottaghizadeh, D. Gacemi, A. Calabrese, A. Vasanelli, L. Li, A. G. Davies, E. H. Linfield, F. Kapsalidis, M. Beck, J. Faist, and C. Sirtori, “Room-temperature nine-μm-wavelength photodetectors and GHz-frequency heterodyne receivers,” Nature 556(7699), 85–88 (2018).

[Crossref]

Castro Neto, A. H.

A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, “The electronic properties of graphene,” Rev. Mod. Phys. 81(1), 109–162 (2009).

[Crossref]

Chakrabarti, S.

S. Chakrabarti, A. D. Stiff-Roberts, X. H. Su, P. Bhattacharya, G. Ariyawansa, and A. G. U. Perera, “High-performance mid-infrared quantum dot infrared photodetectors,” J. Phys. D: Appl. Phys. 38(13), 2135–2141 (2005).

[Crossref]

Chen, C.

Y. Chen, C. Chen, R. Kealhofer, H. Liu, Z. Yuan, L. Jiang, J. Suh, J. Park, C. Ko, H. S. Choe, J. Avila, M. Zhong, Z. Wei, J. Li, S. Li, H. Gao, Y. Liu, J. Analytis, Q. Xia, M. C. Asensio, and J. Wu, “Black Arsenic: a layered semiconductor with extreme in-plane anisotropy,” Adv. Mater. (Weinheim, Ger.) 30(30), 1800754 (2018).

[Crossref]

Chen, X.

S. Yuan, C. Shen, B. Deng, X. Chen, Q. Guo, Y. Ma, A. Abbas, B. Liu, R. Haiges, C. Ott, T. Nilges, K. Watanabe, T. Taniguchi, O. Sinai, D. Naveh, C. Zhou, and F. Xia, “Air-stable room-temperature mid-infrared photodetectors based on hBN/black arsenic phosphorus/hBN heterostructures,” Nano Lett. 18(5), 3172–3179 (2018).

[Crossref] M. Long, A. Gao, P. Wang, H. Xia, C. Ott, C. Pan, Y. Fu, E. Liu, X. Chen, W. Lu, T. Nilges, J. Xu, X. Wang, W. Hu, and F. Miao, “Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus,” Sci. Adv. 3(6), e1700589 (2017).

[Crossref]

Chen, Y.

Y. Chen, C. Chen, R. Kealhofer, H. Liu, Z. Yuan, L. Jiang, J. Suh, J. Park, C. Ko, H. S. Choe, J. Avila, M. Zhong, Z. Wei, J. Li, S. Li, H. Gao, Y. Liu, J. Analytis, Q. Xia, M. C. Asensio, and J. Wu, “Black Arsenic: a layered semiconductor with extreme in-plane anisotropy,” Adv. Mater. (Weinheim, Ger.) 30(30), 1800754 (2018).

[Crossref]

Cho, K.

G. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho, “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors,” Appl. Phys. Lett. 103(5), 053513 (2013).

[Crossref]

Choe, H. S.

Y. Chen, C. Chen, R. Kealhofer, H. Liu, Z. Yuan, L. Jiang, J. Suh, J. Park, C. Ko, H. S. Choe, J. Avila, M. Zhong, Z. Wei, J. Li, S. Li, H. Gao, Y. Liu, J. Analytis, Q. Xia, M. C. Asensio, and J. Wu, “Black Arsenic: a layered semiconductor with extreme in-plane anisotropy,” Adv. Mater. (Weinheim, Ger.) 30(30), 1800754 (2018).

[Crossref]

Choi, K. K.

Chu, P. K.

Z. Guo, H. Zhang, S. Lu, Z. Wang, S. Tang, J. Shao, Z. Sun, H. Xie, H. Wang, X.-F. Yu, and P. K. Chu, “From black phosphorus to phosphorene: Basic solvent exfoliation, evolution of Raman scattering, and applications to ultrafast photonics,” Adv. Funct. Mater. 25(45), 6996–7002 (2015).

[Crossref]

Colombo, L.

G. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho, “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors,” Appl. Phys. Lett. 103(5), 053513 (2013).

[Crossref]

Cronin, S. B.

B. Liu, M. Kopf, A. N. Abbas, X. Wang, Q. Guo, Y. Jia, F. Xia, R. Weihrich, F. Bachhuber, F. Pielnhofer, H. Wang, R. Dhall, S. B. Cronin, M. Ge, X. Fang, T. Nilges, and C. Zhou, “Black Arsenic-Phosphorus: layered anisotropic infrared semiconductors with highly tunable compositions and properties,” Adv. Mater. 27(30), 4423–4429 (2015).

[Crossref]

Crozat, P.

Davies, A. G.

Deng, B.

S. Yuan, C. Shen, B. Deng, X. Chen, Q. Guo, Y. Ma, A. Abbas, B. Liu, R. Haiges, C. Ott, T. Nilges, K. Watanabe, T. Taniguchi, O. Sinai, D. Naveh, C. Zhou, and F. Xia, “Air-stable room-temperature mid-infrared photodetectors based on hBN/black arsenic phosphorus/hBN heterostructures,” Nano Lett. 18(5), 3172–3179 (2018).

[Crossref]

Deng, Y.

H. Liu, Y. Du, Y. Deng, and P. D. Ye, “Semiconducting black phosphorus: synthesis, transport properties and electronic applications,” Chem. Soc. Rev. 44(9), 2732–2743 (2015).

[Crossref]

Detz, H.

Dhall, R.

B. Liu, M. Kopf, A. N. Abbas, X. Wang, Q. Guo, Y. Jia, F. Xia, R. Weihrich, F. Bachhuber, F. Pielnhofer, H. Wang, R. Dhall, S. B. Cronin, M. Ge, X. Fang, T. Nilges, and C. Zhou, “Black Arsenic-Phosphorus: layered anisotropic infrared semiconductors with highly tunable compositions and properties,” Adv. Mater. 27(30), 4423–4429 (2015).

[Crossref]

Dhillon, S.

Dingle, R. B.

Downs, C.

C. Downs and T. E. Vandervelde, “Progress in infrared photodetectors since 2000,” Sensors 13(4), 5054–5098 (2013).

[Crossref]

Du, Y.

H. Liu, Y. Du, Y. Deng, and P. D. Ye, “Semiconducting black phosphorus: synthesis, transport properties and electronic applications,” Chem. Soc. Rev. 44(9), 2732–2743 (2015).

[Crossref]

Dubinov, A. A.

V. Ya. Aleshkin, A. A. Dubinov, M. Ryzhii, V. Ryzhii, and T. Otsuji, “Electron capture in van der Waals graphene based heterostructures with WS2 barrier layers,” J. Phys. Soc. Jpn. 84(9), 094703 (2015).

[Crossref] V. Ryzhii, T. Otsuji, M. Ryzhii, V. Ya. Aleshkin, A. A. Dubinov, V. Mitin, and M. S. Shur, “Vertical electron transport in van der Waals heterostructures with graphene layers,” J. Appl. Phys. 117(15), 154504 (2015).

[Crossref]

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