Developer of full spectrum photovoltaic devices, RoseStreet Labs Energy (RSLE), demonstrated a breakthrough multiband photovoltaic device in a laboratory. The photovoltaic device includes three different light absorption regions, which are embedded into a single-layered thin film device.

The new find is on the basis of the RSLE’s proprietary IBand technology. This is the first intermediate band solar power cell to be demonstrated in a laboratory. With this technology, the possibility of a thin film solar efficiency of higher than 35% is achievable, by the capture of sun’s full spectrum.

The new solar cell is based on the mismatched alloys’ discovery. The single junction device delivers high power output and enhanced solar light absorption. The fabrication of the new photovoltaic device was done on a high-volume CVD based technology. With this fabrication, it signifies the possibility of high volume commercialization.

RSLE’s Chief Executive Officer, Bob Forcier, said that the new breakthrough has pioneered new semiconductor devices for solar photovoltaic conversion and modern semiconductor applications. This new find suits perfectly with their PV commercialization process, he said.

RSLE CTO, Wladek Walukiewicz, stated that this breakthrough demonstration allows tham to progress in the PV research at a faster pace. He added that the IBand technology works well with RSLE’s nitride product development.

Source: http://www.rslenergy.com/