Samsung Electronics will begin mass production of 256-Gigabyte (GB) Universal Flash Storage for high-end mobile devices, the company announced.

The chip has a reading speed of 850 Megabytes per second (MBps) and writing speed of 260MBps, double that of conventional solid-state drives (SSD) and triple that of external microSD cards, Samsung said.

Samsung's recently released Galaxy S7 and S7 Edge don't have a 256GB model so the chip is likely heading for a derivative model of the flagship devices or other future products.

"The chip will go into next-generation premium smartphones," said a Samsung spokesman, who declined to name products and clients.

Samsung's 256GB UFS will satisfy today's need for smartphones that come with large, super-high resolution displays needing fast and high memory in the smallest of sizes, the company said in a statement.

The world's largest memory chip maker launched a 128GB UFS last February that eventually went into the Galaxy S6's variants after launch.

The chips are made with Samsung's proprietary 3D V-NAND flashes and an ultra-small controller.

Smartphones that support USB 3.0 interface will see data processing power hike up to 10 times as fast, and can transfer 5GB Full HD videos within 12 seconds, the company said.

In NAND flashes, more and more smartphones are moving away from embedded multi-media cards (eMMC) to UFS. In DRAMs, low power double data rate synchronous DRAM 4 (LPDDR4) are replacing LPDDR3 to meet increasing processing powers for high quality videos, virtual reality (VR), and other high-memory data activities.